论文信息 - Characterization of silicon during the fabrication of nuclear detectors by the planar process

Characterization of silicon during the fabrication of nuclear detectors by the planar process

Abstract A characterization procedure based on the photoconductive decay method has been developed to determine the recombination lifetime and the surface recombination velocity during silicon detectors manufacturing by the planar process. Special attention has been given towards the evolution of these parameters with regards to thermal oxidation, ion implantation and annealing, in order to improve and control the fabrication steps.

P. Siffert | J. P. Ponpon | J.Ch. Fontaine | S. Barthe | J. P Schunck

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