The p-to-n conversion of HgCdTe, HgZnTe and HgMnTe by anodic oxidation and subsequent heat treatment

p-n junctions have been formed by anodic oxidation of HgCdTe, HgZnTe and HgMnTe followed by a low-temperature anneal. The dependence of junction depth on anneal time, temperature, concentration of native acceptors and material composition has been investigated. The results are interpreted as a diffusion of mercury into the underlying bulk from a finite source formed during anodisation at the interface between the oxide and the bulk of mercury-based semiconductor alloys. The converted layers exhibit high recommendation times and the method can be used for fabrication of photoconductors and photodiodes.