Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications

This paper presents Si/SiGe:C and InP/GaAsSb HBTs which feature specific assets to address submillimeter-wave and THz applications. Process and modeling status and challenges are reviewed. The specific topics of thermal and substrate effects, reliability, and HF measurements are also discussed.

[1]  P. Chevalier,et al.  Application of on-wafer calibration techniques for advanced high-speed BiCMOS technology , 2010, 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).

[2]  V. d’Alessandro,et al.  Analytical modeling and numerical simulations of the thermal behavior of trench-isolated bipolar transistors , 2009 .

[3]  P. Chevalier,et al.  Extrinsic base resistance optimization in DPSA-SEG SiGe:C HBTs , 2012, 2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).

[4]  John D. Cressler,et al.  A Comparison of the Degradation in RF Performance Due to Device Interconnects in Advanced SiGe HBT and CMOS Technologies , 2015, IEEE Transactions on Electron Devices.

[5]  Mark J. W. Rodwell,et al.  An InGaAs/InP DHBT With Simultaneous $\text{f}_{\boldsymbol \tau }/\text{f}_{\text {max}}~404/901$ GHz and 4.3 V Breakdown Voltage , 2015, IEEE Journal of the Electron Devices Society.

[6]  C. Jungemann,et al.  Impact Ionization Noise in SiGe HBTs: Comparison of Device and Compact Modeling With Experimental Results , 2009, IEEE Transactions on Electron Devices.

[7]  S. Jeng,et al.  Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology , 2002, IEEE Electron Device Letters.

[8]  J. Kirchgessner,et al.  Novel Collector Structure Enabling Low-Cost Millimeter-Wave SiGe:C BiCMOS Technology , 2007, 2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium.

[9]  P. Chevalier,et al.  Towards THz SiGe HBTs , 2011, 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

[10]  M. Schroter,et al.  Hydrodynamic simulations for advanced SiGe HBTs , 2010, 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).

[11]  François Marc,et al.  Advancements on reliability-aware analog circuit design , 2012, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

[12]  M. Iwamoto,et al.  GaAsSb DHBT IC technology for RF and microwave instrumentation , 2005, IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05..

[13]  Herbert Zirath,et al.  mm-Wave noise modeling in advanced SiGe and InP HBTs , 2015 .

[14]  M. Schroter,et al.  A Geometry Scalable Approach to InP HBT Compact Modeling for mm-Wave Applications , 2013, 2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

[15]  Thomas Zimmer,et al.  Reliability of high-speed SiGe: C HBT under electrical stress close to the SOA limit , 2015, Microelectron. Reliab..

[16]  K. Aufinger,et al.  SiGe HBT and BiCMOS process integration optimization within the DOTSEVEN project , 2015, 2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM.

[17]  François Marc,et al.  Reliability of submicron InGaAs/InP DHBT under thermal and electrical stresses , 2011, Microelectron. Reliab..

[18]  Anjan Chakravorty,et al.  Modeling Nonquasi-Static Effects in SiGe HBTs , 2010, IEEE Transactions on Electron Devices.

[19]  Rudolf Lachner,et al.  Advanced Heterojunction Bipolar Transistor for Half-THz SiGe BiCMOS Technology , 2015, IEEE Electron Device Letters.

[20]  M. Schroter,et al.  Systematic Compact Modeling of Correlated Noise in Bipolar Transistors , 2012, IEEE Transactions on Microwave Theory and Techniques.

[21]  D. Celi,et al.  Impact of layout and technology parameters on the thermal resistance of SiGe:C HBTs , 2010, 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).

[22]  Mark S. Lundstrom.  Computational electronics for the 21st century: Reflections on the past, present, and future , 2015, 2015 45th European Solid State Device Research Conference (ESSDERC).

[23]  Hideaki Matsuzaki,et al.  Improvement of High-Frequency Characteristics of InGaAsSb-Base Double Heterojunction Bipolar Transistors by Inserting a Highly Doped GaAsSb Base Contact Layer , 2015, IEEE Electron Device Letters.

[24]  V. d'Alessandro,et al.  Theory of electrothermal behavior of bipolar transistors: part III-impact ionization , 2006, IEEE Transactions on Electron Devices.

[25]  Arnulf Leuther,et al.  Advanced building blocks for (Sub-)millimeter-wave applications in space, communication, and sensing using III/V mHEMT technology , 2016, 2016 Global Symposium on Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications.

[26]  S. Reynolds,et al.  A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applications , 2014, 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).

[27]  D. Knoll,et al.  SiGe HBT module with 2.5 ps gate delay , 2008, 2008 IEEE International Electron Devices Meeting.

[28]  François Marc,et al.  Preliminary results of storage accelerated aging test on InP/GaAsSb DHBT , 2010, IPRM 2011 - 23rd International Conference on Indium Phosphide and Related Materials.

[29]  M. Schroter,et al.  Physics-based minority charge and transit time modeling for bipolar transistors , 1999 .

[30]  D. Knoll,et al.  SiGe:C BiCMOS technology with 3.6 ps gate delay , 2003, IEEE International Electron Devices Meeting 2003.

[31]  S. P. Watkins,et al.  TYPE II PHOTOLUMINESCENCE AND CONDUCTION BAND, OFFSETS OF GAASSB/INGAAS AND GAASSB/INP HETEROSTRUCTURES GROWN BY METALORGANIC VAPOR PHASE EPITAXY , 1998 .

[32]  Vibhor Jain,et al.  SiGe HBTs in 90nm BiCMOS Technology Demonstrating fT/fMAX 285GHz/475GHz through Simultaneous Reduction of Base Resistance and Extrinsic Collector Capacitance , 2014 .

[33]  P. Chevalier,et al.  Band-to-band tunneling in vertically scaled SiGe:C HBTs , 2006, IEEE Electron Device Letters.

[34]  Dritan Celo,et al.  Compact, netlist-based representation of thermal transient coupling using controlled sources , 2004, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.

[35]  Michael Schroter,et al.  A generalized integral charge-control relation and its application to compact models for silicon-based HBT's , 1993 .

[36]  Rajaram Bhat,et al.  InP/GaAsSb/InP and InP/GaAsSb/InGaAsP double heterojunction bipolar transistors with a carbon‐doped base grown by organometallic chemical vapor deposition , 1996 .

[37]  François Marc,et al.  Investigation of the degradation mechanisms of InP/InGaAs DHBT under bias stress conditions to achieve electrical aging model for circuit design , 2011, Microelectron. Reliab..

[38]  J. Cressler,et al.  Current gain rolloff in graded-base SiGe heterojunction bipolar transistors , 1993, IEEE Electron Device Letters.

[39]  Maria Alexandrova,et al.  GaAsSb-Based DHBTs With a Reduced Base Access Distance and $f_{\mathrm {T}}/f_{\mathrm {MAX}}=$ 503/780 GHz , 2014, IEEE Electron Device Letters.

[40]  W. Deal,et al.  First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process , 2015, IEEE Electron Device Letters.

[41]  K. Oda,et al.  SiGe HBT Technology Based on a 0.13- $\mu{\rm m}$ Process Featuring an ${f}_{\rm MAX}$ of 325 GHz , 2014, IEEE Journal of the Electron Devices Society.

[42]  Alessandro Magnani,et al.  Advanced thermal simulation of SiGe: C HBTs including back-end-of-line , 2016, Microelectron. Reliab..

[43]  Mau-Chung Frank Chang,et al.  Growth and doping of GaAsSb via metalorganic chemical vapor deposition for InP heterojunction bipolar transistors , 1996 .

[44]  H. Shimamoto,et al.  Ultra-low base resistance self-aligned SEG SiGe HBTs for high-sensitivity wide-bandwidth amplifiers , 2005, Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005..

[45]  Bernd Heinemann,et al.  SiGe HBT Technology: Future Trends and TCAD-Based Roadmap , 2017, Proceedings of the IEEE.

[46]  C.M. Grens,et al.  On Common–Base Avalanche Instabilities in SiGe HBTs , 2008, IEEE Transactions on Electron Devices.

[47]  M. Peter,et al.  BAND GAPS AND BAND OFFSETS IN STRAINED GAAS1-YSBY ON INP GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION , 1999 .

[48]  T. Zimmer,et al.  A study on transient intra-device thermal coupling in multifinger SiGe HBTs (Student) , 2014, 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).

[49]  J. S. Brodsky,et al.  Equivalent circuit modeling of static substrate thermal coupling using VCVS representation , 2002, IEEE J. Solid State Circuits.

[50]  C. R. Bolognesi,et al.  InP/GaAsSb DHBTs for THz applications and improved extraction of their cutoff frequencies , 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

[51]  Masayoshi Tonouchi,et al.  Cutting-edge terahertz technology , 2007 .

[52]  Sorin P. Voinigescu,et al.  Will BiCMOS stay competitive for mmW applications ? , 2008, 2008 IEEE Custom Integrated Circuits Conference.

[53]  S. P. Watkins,et al.  InP/GaAsSb/InP double HBTs: a new alternative for InP-based DHBTs , 2001 .

[54]  Peng Cheng,et al.  Reliability of SiGe HBTs for Power Amplifiers—Part II: Underlying Physics and Damage Modeling , 2009, IEEE Transactions on Device and Materials Reliability.

[55]  Z. Griffith,et al.  Thermal limitations of InP HBTs in 80- and 160-gb ICs , 2004, IEEE Transactions on Electron Devices.

[56]  S. Decoutere,et al.  Pedestal collector optimization for high speed SiGe:C HBT , 2011, 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

[57]  Thomas Zimmer,et al.  Substrate-coupling effect in BiCMOS technology for millimeter wave applications , 2015, 2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS).

[58]  M. Schroter,et al.  Modeling thermal resistance in trench-isolated bipolar technologies including trench heat flow , 2002 .

[59]  J.A.M. Geelen,et al.  An improved de-embedding technique for on-wafer high-frequency characterization , 1991, Proceedings of the 1991 Bipolar Circuits and Technology Meeting.

[60]  Alain Chantre,et al.  0.13 $\mu$ m SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications , 2009, IEEE Journal of Solid-State Circuits.

[61]  Cristell Maneux,et al.  InP HBT Thermal Management by Transferring to High Thermal Conductivity Silicon Substrate , 2014, IEEE Electron Device Letters.

[62]  François Marc,et al.  Thermal aging model of InP/InGaAs/InP DHBT , 2010, Microelectron. Reliab..

[63]  T. Nagatsuma,et al.  Present and Future of Terahertz Communications , 2011, IEEE Transactions on Terahertz Science and Technology.

[64]  Vincenzo d'Alessandro,et al.  Influence of Scaling and Emitter Layout on the Thermal Behavior of Toward-THz SiGe:C HBTs , 2014, IEEE Transactions on Electron Devices.

[65]  Guofu Niu,et al.  Damage mechanisms in impact-ionization-induced mixed-mode reliability degradation of SiGe HBTs , 2005, IEEE Transactions on Device and Materials Reliability.

[66]  W. J. Kloosterman,et al.  Modelling two SiGe HBT specific features for circuit simulation , 2001, Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212).

[67]  P. Chevalier,et al.  Characterization of mutual heating inside a SiGe ring oscillator , 2012, 2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).

[68]  F. Sato,et al.  Sub-20 ps ECL circuits with high-performance super self-aligned selectively grown SiGe base (SSSB) bipolar transistors , 1995 .

[69]  V. d'Alessandro,et al.  Influence of Concurrent Electrothermal and Avalanche Effects on the Safe Operating Area of Multifinger Bipolar Transistors , 2009, IEEE Transactions on Electron Devices.

[70]  Robert Shimon,et al.  InP IC Technology Powers Agilent's Infiniium 90000 X-Series Real Time Oscilloscope , 2010, 2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

[71]  C. Bolognesi,et al.  300 GHz InP/GaAsSb/InP double HBTs with high current capability and BV/sub CEO/>6 V , 2001, IEEE Electron Device Letters.

[72]  G.A.M. Hurkx,et al.  A Novel Fully Self-Aligned SiGe:C HBT Architecture Featuring a Single-Step Epitaxial Collector-Base Process , 2007, 2007 IEEE International Electron Devices Meeting.

[73]  Michael Schroter,et al.  Characterization of the Static Thermal Coupling Between Emitter Fingers of Bipolar Transistors , 2014, IEEE Transactions on Electron Devices.

[74]  J. D. Cressler,et al.  Predictive Physics-Based TCAD Modeling of the Mixed-Mode Degradation Mechanism in SiGe HBTs , 2012, IEEE Transactions on Electron Devices.

[75]  R. Barth,et al.  SiGe:C HBT architecture with epitaxial external base , 2011, 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

[76]  Colombo R. Bolognesi,et al.  Comparative technology assessment of future InP HBT ultrahigh-speed digital circuits , 2007 .

[77]  W. Liu,et al.  Near-ideal I-V characteristics of GaInP/GaAs heterojunction bipolar transistors , 1992, IEEE Electron Device Letters.

[78]  Keh-Yung Cheng,et al.  Graded base type-II InP/GaAsSb DHBT with f/sub T/=475 GHz , 2006, IEEE Electron Device Letters.

[79]  Tibor Grasser,et al.  Hot Carrier Degradation in Semiconductor Devices , 2015 .

[80]  M. Luisier,et al.  Multiscale Metrology and Optimization of Ultra-Scaled InAs Quantum Well FETs , 2010, IEEE Transactions on Electron Devices.

[81]  Thomas Zimmer,et al.  New 3D-TRL structures for on-wafer calibration For high frequency S-parameter measurement , 2015, 2015 European Microwave Conference (EuMC).

[82]  Hans-Martin Rein,et al.  Modeling substrate effects in the design of high-speed Si-bipolar ICs , 1996, IEEE J. Solid State Circuits.

[83]  Katsuyoshi Washio.  SiGe HBT and BiCMOS technologies for optical transmission and wireless communication systems , 2003 .

[84]  Michael Schroter,et al.  An Improved Transfer Current Model for RF and mm-Wave SiGe(C) Heterojunction Bipolar Transistors , 2014, IEEE Transactions on Electron Devices.

[85]  M. Racanelli,et al.  A millimeter-wave capable SiGe BiCMOS process with 270GHz FMAX HBTs designed for high volume manufacturing , 2011, 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

[86]  O. Ostinelli,et al.  Uniform-Base InP/GaInAsSb DHBTs Exhibiting $f_{\rm MAX}/f_{\rm T}>635/420~{\rm GHz}$ , 2014, IEEE Electron Device Letters.

[87]  T. Zimmer,et al.  Submicrometer InP/InGaAs DHBT Architecture Enhancements Targeting Reliability Improvements , 2013, IEEE Transactions on Electron Devices.

[88]  A. Lisauskas,et al.  Opportunities for silicon at mmWave and Terahertz frequencies , 2008, 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

[89]  P. Chevalier,et al.  Nanoscale SiGe BiCMOS technologies: From 55 nm reality to 14 nm opportunities and challenges , 2015, 2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM.

[90]  Mark J. W. Rodwell,et al.  Indium Phosphide Heterobipolar Transistor Technology Beyond 1-THz Bandwidth , 2015, IEEE Transactions on Electron Devices.

[91]  D. Celi,et al.  A scalable substrate network for compact modelling of deep trench insulated HBT , 2005 .

[92]  Hideaki Matsuzaki,et al.  MOCVD-grown compressively strained C-doped InxGa1−xAs1−ySby with high-In/Sb content for very low turn-on-voltage InP-based DHBTs , 2014 .

[93]  S. Frégonèse,et al.  A scalable model for temperature dependent thermal resistance of SiGe HBTs , 2013, 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).

[94]  T. Zimmer,et al.  Investigation of high frequency coupling between probe tips and wafer surface , 2009, 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

[95]  P. Asbeck,et al.  Large-signal HBT model with improved collector transit time formulation for GaAs and InP technologies , 2003, IEEE MTT-S International Microwave Symposium Digest, 2003.

[96]  V. d'Alessandro,et al.  Analysis of the Bipolar Current Mirror Including Electrothermal and Avalanche Effects , 2009, IEEE Transactions on Electron Devices.

[97]  S. Tiwari.  A new effect at high currents in heterostructure bipolar transistors , 1988, IEEE Electron Device Letters.

[98]  Vincenzo d'Alessandro,et al.  On the safe operating area of bipolar cascode amplifiers , 2013, 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).

[99]  G. G. Fischer,et al.  Ageing and thermal recovery of advanced SiGe heterojunction bipolar transistors under long-term mixed-mode and reverse stress conditions , 2015, Microelectron. Reliab..

[100]  M. Schroter,et al.  Why is there no internal collector resistance in HICUM? , 2016, 2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).

[101]  D. Celi,et al.  Impact study of the process thermal budget of advanced CMOS nodes on SiGe HBT performance , 2015, 2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM.

[102]  Michael Schroter,et al.  A Multiregion Approach to Modeling the Base-Collector Junction Capacitance , 2016, IEEE Transactions on Electron Devices.