Overlay mark, overlay measurement method and semiconductor device manufacturing method using the overlay mark

The present invention relates to an overlay measuring method and a semiconductor device manufacturing method using the overlay marks, and this. The present invention provides an overlay marks to determine the relative displacement between the two or more patterns are formed separately in two consecutive pattern layer or a layer which, facing each other, looking at the opposite pair of first badeulwa, each extending in a first direction first overlay structure including the first direction and second bars of the pair extending in an orthogonal second direction, and the third bars of the plurality of pairs of side-by-side with the first bars, a plurality pairs of side-by-side with said second bars of claim 4 includes bars, is different from each other, the spacing between adjacent bars to claim 3, there is provided an overlay mark interval comprises a different second overlay structure between adjacent bars to a fourth. By varying the distance between the present invention according to the overlay mark bars has the advantage of being able to minimize the error occurs during image analysis.