论文信息 - Characteristics Of Nonselective Gaas/(A1,Ga)As Heterostructure Etching At Very Low Etch Rates

Characteristics Of Nonselective Gaas/(A1,Ga)As Heterostructure Etching At Very Low Etch Rates

Wet etching of (Al,Ga)As material and heterojunctions with etch speeds in the range of 3 to 4 Å/second using a citric acid based etch have been investigated by studying etch profiles and surface film formation. Etch mechanisms are identified based on observations of isotropic and preferential etching and surface film characteristics.

E. Kohn | Kambiz Alavi | M. Schneider | C. Colvard

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