LEAKAGE POWER REDUCTION TECHNIQUE IN CMOS CIRCUIT: A STATE-OF-THE-ART REVIEW

The demand for low power devices is increasing vastly due to the fast growth of battery operated applications such as smart phones and other handheld devices. It has become important to control the power dissipation throughout the design cycle beginning from the architectural level to final design at hardware level. Leakage current is the main factor which contributes to almost or more than 50% of total power dissipation. In many new high performance designs, the leakage component of power consumption is comparable to the switching component. More than 40% leakage in SRAM memory is due to leakage in transistors. This survey paper use the design of SRAM architecture to reduce the leakage current and hence the leakage power. The various leakage power reduction techniques have been evolved to tackle the problem and it is still in progress. In this paper mainly, there is study of various leakage power reduction techniques with SRAM architecture in fabrication Technology.

[1]  Dhiraj K. Pradhan,et al.  Robust SRAM Designs and Analysis , 2012 .

[2]  M. Hussein,et al.  A 130 nm generation logic technology featuring 70 nm transistors, dual Vt transistors and 6 layers of Cu interconnects , 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

[3]  Robert F. Pierret,et al.  Semiconductor device fundamentals , 1996 .

[4]  Saibal Mukhopadhyay,et al.  Leakage current mechanisms and leakage reduction techniques in deep-submicrometer CMOS circuits , 2003, Proc. IEEE.

[5]  Kaushik Roy,et al.  Gated-Vdd: a circuit technique to reduce leakage in deep-submicron cache memories , 2000, ISLPED '00.

[6]  Stephanie Thalberg,et al.  Fundamentals Of Modern Vlsi Devices , 2016 .

[7]  Chetna Mr. Abhijeet Design of Low Power 5T-Dual Vth SRAM-Cell , 2012 .

[8]  David Blaauw,et al.  Drowsy caches: simple techniques for reducing leakage power , 2002, ISCA.

[9]  Pramod Kolar,et al.  A 1.1 GHz 12 $\mu$A/Mb-Leakage SRAM Design in 65 nm Ultra-Low-Power CMOS Technology With Integrated Leakage Reduction for Mobile Applications , 2008, IEEE Journal of Solid-State Circuits.

[10]  Keith A. Bowman,et al.  A minimum total power methodology for projecting limits on CMOS GSI , 2000, IEEE Trans. Very Large Scale Integr. Syst..

[11]  Yong-Gee Ng,et al.  A 3.8 GHz 153 Mb SRAM Design With Dynamic Stability Enhancement and Leakage Reduction in 45 nm High-k Metal Gate CMOS Technology , 2009, IEEE Journal of Solid-State Circuits.

[12]  Chenming Hu,et al.  A dynamic threshold voltage MOSFET (DTMOS) for ultra-low voltage operation , 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

[13]  E. Seevinck,et al.  Static-noise margin analysis of MOS SRAM cells , 1987 .

[14]  Chenming Hu,et al.  Channel profile optimization and device design for low-power high-performance dynamic-threshold MOSFET , 1996, International Electron Devices Meeting. Technical Digest.

[15]  Shin'ichiro Mutoh,et al.  1-V power supply high-speed digital circuit technology with multithreshold-voltage CMOS , 1995, IEEE J. Solid State Circuits.

[16]  Laxmi Singh,et al.  4T DRAM based on Self-controllable Voltage Level technique for low leakage power in VLSI , 2013 .