论文信息 - Analysis of anomalous cells within RESET distribution for phase change memory

Analysis of anomalous cells within RESET distribution for phase change memory

Resistance distributions of the crystalline (SET) state and amorphous (RESET) state for phase change memory (PCM) are experimentally investigated at the array level. The RESET distribution shows a low resistance tail, which potentially affects the reading margin of the chip. These tail cells are divided into two types by resistance programming current (R-IP) and current voltage (I-V) characteristics. Finally, approaches of improving the integration process to remove the Type-1 tail cells and optimizing the programming operation to repair the Type-2 tail cells are proposed.

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