200VTrenchFilling TypeSuperJunction MOSFET withOrthogonal GateStructure

A SuperJunction (SJ) MOSFETwhichtrench gates are orthogonal top/ncolumns wasfabricated toimprove atradeoffrelationship between specific on-resistance (Ron) and gate-drain charge (Qgd). Inthis structure, atrench gatepitch andap/ncolumn pitch canbeindependently controlled. We experimentally demonstrated adependence ofRonandQgd ontheorthogonal gatepitch. Theexperimental valueof Ron*Qgd decreased withtheincrease ofgatepitch, andthis value of0.166QnC wasachieved atthetrench gatepitch of 10ptmandthep/ncolumnpitch of2.7ptm. Thisfigure-ofmerits (FOMs)value isabout 36%lowerthanthat ofthe previous reported for200VSJ-MOSFETs. Moreover, the unclamped inductive switching (UIS) endurance ofthis SJMOSFETwas24mJ/mm2 andthis result is1.3times stronger than that ofconventional trench MOSFET.