Thermodynamic design of a high temperature chemical vapor deposition process to synthesize α-SiC in Si-C-H and Si-C-H-Cl systems

[1]  H. Tsuchida,et al.  Developing Technologies of SiC Gas Source Growth Method , 2016 .

[2]  Myung-Hyun Lee,et al.  Condensation of vapor species at the outlets in high temperature chemical vapor deposition using tetramethylsilane as a precursor for SiC bulk growth , 2015 .

[3]  T. Kimoto Material science and device physics in SiC technology for high-voltage power devices , 2015 .

[4]  Myung-Hyun Lee,et al.  High-Temperature Chemical Vapor Deposition for SiC Single Crystal Bulk Growth Using Tetramethylsilane as a Precursor , 2014 .

[5]  Myung-Hyun Lee,et al.  Thermodynamic approach to the synthesis of silicon carbide using tetramethylsilane as the precursor at high temperature , 2012 .

[6]  A. Henry,et al.  High Growth Rate of 4H-SiC Epilayers on On-Axis Substrates with Different Chlorinated Precursors , 2010 .

[7]  M. Pons,et al.  Chlorinated silicon carbide CVD revisited for polycrystalline bulk growth , 2007 .

[8]  J. Redwing,et al.  Thermodynamic equilibrium limitations on the growth of SiC by halide chemical vapor deposition , 2007 .

[9]  D. Chaussende,et al.  Thermodynamic Aspects of the Growth of SiC Single Crystals using the CF-PVT Process , 2006 .

[10]  S. V. Sotirchos,et al.  Experimental study of atmospheric pressure chemical vapor deposition of silicon carbide from methyltrichlorosilane , 1999 .

[11]  A. Ellison,et al.  Growth of SiC by Hot-Wall CVD and HTCVD , 1997 .

[12]  E. Suh,et al.  GROWTH MECHANISM OF 3C-SIC(111) FILMS ON SI USING TETRAMETHYLSILANE BY RAPID THERMAL CHEMICAL VAPOR DEPOSITION , 1997 .

[13]  Hiroshi Harima,et al.  Raman Investigation of SiC Polytypes , 1997 .

[14]  R. Berjoan,et al.  Growth and properties of CVD-SiC layers using tetramethylsilane , 1992 .

[15]  K. Minato,et al.  Chemical vapor deposition of silicon carbide for coated fuel particles , 1987 .