论文信息 - A physically based scalable SPICE model for Shielded-Gate Trench Power MOSFETs

A physically based scalable SPICE model for Shielded-Gate Trench Power MOSFETs

This paper proposes a novel physical scalable SPICE model for Shielded-Gate Trench Power MOSFETs. The model is based on process and layout parameters, enabling design optimization through a direct link between SPICE and process technology. The model has been validated with Fairchild's state of the art technology. The model is SPICE agnostic, working seamlessly across multiple industry standard simulation platforms.

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