论文信息 - Characterisation and simulation of a single-sided, n+ on n silicon microstrip detector before and after neutron irradiation - 字舞流文

Characterisation and simulation of a single-sided, n+ on n silicon microstrip detector before and after neutron irradiation

L. Fiore | G. Raso | D. Creanza | M. Palma | G. Maggi | S. My | G. Selvaggi | P. Tempesta | M. Angarano | A. Báder | A. Bader

[1] S. Seidel,et al. Measurement of proton-induced radiation damage effects in double-sided silicon microstrip detectors , 1997 .

[2] H. Feick,et al. Long term damage studies using silicon detectors fabricated from different starting materials and irradiated with neutrons, protons, and pions , 1996 .

[3] S. Roe,et al. Radiation damage studies of field plate and p-stop n-side silicon microstrip detectors , 1995 .

[4] Shaun Roe,et al. Radiation studies and operational projections for silicon in the ATLAS inner detector , 1995 .

[5] E. Barberis,et al. Capacitances in silicon microstrip detectors , 1994 .

[6] D. Pitzl,et al. Type inversion in silicon detectors , 1992 .

[7] Theodore I. Kamins,et al. Device Electronics for Integrated Circuits , 1977 .