The variation of temperature- dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation

The effects of surface passivation effect on electron mobility and crystal structure in Al0.3Ga0.7N/AlN/GaN heterostructures are investigated by classical Hall effect measurements and an X-ray diffraction method. Al0.3Ga0.7N/AlN/GaN heterostructures with different doping and layer structures were grown by molecular beam epitaxy with or without growing an in situ SiN passivation layer. The classical Hall effect measurements were carried out as a function of temperature in the range between T = 1.82 K and 270 K at a fixed magnetic field in dark conditions. The effect of doping of the barrier layer and replacing an AlN inter-layer between the AlGaN barrier and the GaN layer, where the two-dimensional electron gas is populated, on mobility and sheet carrier concentration were also determined.

[1]  Lester F. Eastman,et al.  Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures , 1999 .

[2]  S. Gökden.  Mobility of two‐dimensional electrons in an AlGaN/GaN modulation‐doped heterostructure , 2003 .

[3]  E. Ozbay,et al.  Determination of the LO phonon energy by using electronic and optical methods in AlGaN/GaN , 2012 .

[4]  W. Walukiewicz,et al.  Effects of piezoelectric field on defect formation, charge transfer, and electron transport at GaN/AlxGa1−xN interfaces , 1998 .

[5]  James S. Speck,et al.  Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors , 2000 .

[6]  Lorenzo Faraone,et al.  The effects of GaN capping layer thickness on two-dimensional electron mobility in GaN/AlGaN/GaN heterostructures , 2005 .

[7]  F. Giannazzo,et al.  Recent advances on dielectrics technology for SiC and GaN power devices , 2014 .

[8]  AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor with an in-situ AlN cap layer , 2011 .

[9]  Ekmel Ozbay,et al.  Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al0.25Ga0.75N/GaN heterostructures , 2007 .

[10]  M. Spencer,et al.  On the origin of the two-dimensional electron gas at the AlGaN/GaN heterostructure interface , 2005 .

[11]  Ruolian Jiang,et al.  Two-dimensional electron gas densities in AlGaN/AlN/GaN heterostructures , 2006 .

[12]  Vincent Gambin,et al.  In situ SiN passivation of AlGaN/GaN HEMTs by molecular beam epitaxy , 2007 .

[13]  M. Asif Khan,et al.  High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction , 1993 .

[14]  James S. Speck,et al.  Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures , 2003 .

[15]  James S. Speck,et al.  POLARIZATION-INDUCED CHARGE AND ELECTRON MOBILITY IN ALGAN/GAN HETEROSTRUCTURES GROWN BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY , 1999 .

[16]  T. Egawa,et al.  Effect of AlN growth temperature on trap densities of in-situ metal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors , 2012 .

[17]  U. Mishra,et al.  30-W/mm GaN HEMTs by field plate optimization , 2004, IEEE Electron Device Letters.

[18]  Hadis Morko,et al.  Handbook of Nitride Semiconductors and Devices , 2008 .

[19]  A. Asgari,et al.  The control of two-dimensional-electron-gas density and mobility in AlGaN/GaN heterostructures with Schottky gate , 2006 .

[20]  Joan M. Redwing,et al.  Piezoelectric charge densities in AlGaN/GaN HFETs , 1997 .

[21]  R. Zhang,et al.  Effects of an AlN passivation layer on the microstructure and electronic properties of AlGaN/GaN heterostructures , 2008 .

[22]  Alan Francis Wright,et al.  Elastic properties of zinc-blende and wurtzite AlN, GaN, and InN , 1997 .

[23]  T. Mimura,et al.  A comparative study of effects of SiNx deposition method on AlGaN/GaN heterostructure field-effect transistors , 2009 .

[24]  Peter M. Asbeck,et al.  Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors , 1997 .

[25]  S. Denbaars,et al.  AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy , 2001 .

[26]  B. Ridley.  Hot electrons in low-dimensional structures , 1991 .

[27]  Umesh K. Mishra,et al.  Effects of oxidation on surface chemical states and barrier height of AlGaN/GaN heterostructures , 2010 .

[28]  Ram M. Narayanan,et al.  Covert communications using heterodyne correlation random noise signals , 2007 .

[29]  S. Keller,et al.  High-power AlGaN/GaN HEMTs for Ka-band applications , 2005, IEEE Electron Device Letters.