LDMOS device capable of improving breakdown voltage and manufacturing method thereof

The invention provides an LDMOS device capable of improving breakdown voltage and a manufacturing method thereof. In the prior art, the requirement of further improving LDMOS breakdown voltage can not be satisfied by only using the LDMOS self structure to conform to an RESURF principle singly. The LDMOS device capable of improving breakdown voltage in the invention comprises a drain electrode and a drain electrode drift zone, and the drain electrode drift zone is provided with a transoid block with an opposite doped type. The invention can enable the electric field of the drain electrode to be distributed more uniform horizontally by conforming to the RESURF principle twice, thus improving the breakdown voltage effectively under the premise of not enlarging the size of the device.