Measurement of silicon surface recombination velocity using ultrafast pump–probe reflectivity in the near infrared

We demonstrate that ultrafast pump–probe reflectivity measurements from bulk Si samples using a Ti:sapphire femtosecond oscillator (λ=800 nm) can be used to measure the Si surface recombination velocity. The technique is sensitive to recombination velocities greater than ∼104 cm s−1.

[1]  Takayuki Tanaka,et al.  Subpicosecond surface-restricted carrier and thermal dynamics by transient reflectivity measurements , 1997 .

[2]  Oliver B. Wright,et al.  Acoustic generation in crystalline silicon with femtosecond optical pulses , 1995 .

[3]  A. Sabbah,et al.  A compact rotating-mirror autocorrelator design for femtosecond and picosecond laser pulses , 1998 .

[4]  A. Mandelis,et al.  Photothermal reflectance investigation of processed silicon. I. Room‐temperature study of the induced damage and of the annealing kinetics of defects in ion‐implanted wafers , 1990 .

[5]  Chang,et al.  Unusually low surface-recombination velocity on silicon and germanium surfaces. , 1986, Physical review letters.

[6]  R. Bechmann,et al.  Numerical data and functional relationships in science and technology , 1969 .

[7]  Jan Linnros,et al.  Carrier lifetime measurements using free carrier absorption transients. I. Principle and injection dependence , 1998 .

[8]  J. Eikelboom,et al.  Sensitivity analysis for the determination of recombination parameters in Si wafers using harmonic carrier generation , 1996 .

[9]  O. Madelung,et al.  Landolt-Börnstein: Numerical Data and Functional Relationships in Science and Technology - New Series , 1965 .

[10]  van Driel Hm.  Kinetics of high-density plasmas generated in Si by 1.06- and 0.53- microm picosecond laser pulses. , 1987 .

[11]  R. R. Alfano,et al.  Semiconductors probed by ultrafast laser spectroscopy , 1984 .

[12]  Hai-Lung Dai,et al.  Ultrafast Carrier Dynamics in Silicon: A Two-Color Transient Reflection Grating Study on a ( 111 ) Surface , 1998 .

[13]  H. Dai,et al.  Photoexcited carrier diffusion near a Si(111) surface: Non-negligible consequence of carrier-carrier scattering , 1997 .

[14]  L. Reggiani,et al.  Hot-Electron Transport in Semiconductors , 1985 .

[15]  G. Rozgonyi,et al.  Separation of the bulk and surface components of recombination lifetime obtained with a single laser/microwave photoconductance technique , 1992 .

[16]  Z. Ling,et al.  Simultaneous extraction of bulk lifetime and surface recombination velocities from free carrier absorption transients , 1994 .

[17]  Jan Linnros,et al.  Carrier lifetime measurements using free carrier absorption transients. II. Lifetime mapping and effects of surface recombination , 1998 .

[18]  Rowe,et al.  Picosecond photoelectron spectroscopy of excited states at Si(111) sqrt 3 x sqrt 3 R30 degrees-B, Si(111)7 x 7, Si(100)2 x 1, and laser-annealed Si(111)1 x 1 surfaces. , 1993, Physical Review B (Condensed Matter).

[19]  A. A. Studna,et al.  Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV , 1983 .

[20]  J. Bokor,et al.  Ultrafast carrier dynamics near the Si(100)2×1 surface , 1999 .

[21]  Bokor,et al.  Surface Recombination on the Si(111) 2 x 1 Surface. , 1989, Physical review letters.

[22]  Gerald Earle Jellison,et al.  The temperature dependence of the refractive index of silicon at elevated temperatures at several laser wavelengths , 1986 .

[23]  A. Mandelis,et al.  Noncontact measurement of transport properties of long‐bulk‐carrier‐lifetime Si wafers using photothermal radiometry , 1996 .