论文信息 - THE CHARACTERISTICS OF HIGH-RESISTANCE LAYERS PRODUCED IN N-GAAS USING MEV-NITROGEN IMPLANTATION FOR THREE-DIMENSIONAL STRUCTURING

THE CHARACTERISTICS OF HIGH-RESISTANCE LAYERS PRODUCED IN N-GAAS USING MEV-NITROGEN IMPLANTATION FOR THREE-DIMENSIONAL STRUCTURING

The radiation damage introduced in n-GaAs by 4-MeV N+ implantation at a dose of 1×1015 cm−2 has been analyzed using micro-Raman spectroscopy. Implantation followed by annealing at 600 °C was found to produce a strongly compensated near-surface layer possessing a high crystalline quality. At the same time a pronounced disorder was found underneath the high-resistance layer which enables the fabrication of 2.5-μm thick free-standing membranes using selective electrochemical etching techniques.

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