Temperature effects and long term fading of implanted and unimplanted gate oxide RADFETs

Key aspects of continuous operation of Radiation Sensitive Field Effect Transistors (RADFETs) as radiation monitors in space missions are addressed. The effect of possible temperature fluctuations and long-term fading on threshold-voltage measurement of Implanted and Unimplanted gate oxide RADFETs were studied. Evidence for temperature coefficient changes following irradiation and annealing cycles is presented. In addition, fading of unimplanted gate oxide RADFETs is shown to be significantly lower than that of Implanted ones.

[1]  Characterisation of radiation response of 400 nm implanted gate oxide RADFETs , 2002, 2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595).

[2]  Milic M. Pejovic,et al.  Gamma-ray irradiation and post-irradiation responses of high dose range RADFETs , 2001, RADECS 2001. 2001 6th European Conference on Radiation and Its Effects on Components and Systems (Cat. No.01TH8605).

[3]  G.,et al.  ON-CHIP p-MOSFET DOSIMETRY , 1997 .

[4]  M. Buehler,et al.  CRRES microelectronic test chip orbital data. II , 1992 .

[5]  R. Nickson,et al.  Dose-depth and SEU monitors for the STRV-1c satellite , 1998 .

[6]  Dan Keun Sung,et al.  Analysis of anomalous TDE data on-board the KITSAT-1 , 1999 .

[7]  Wei Hwang,et al.  Electrical Characteristics of Large-Scale Integration Silicon MOSFET's at Very High Temperatures,Part III: Modeling and Circuit Behavior , 1984 .

[8]  A. Mathewson,et al.  The effect of different biasing configurations on radfet response measured by automated read-out system , 2003, Proceedings of the 7th European Conference on Radiation and Its Effects on Components and Systems, 2003. RADECS 2003..

[9]  Goran S. Ristić,et al.  SENSITIVITY AND FADING OF PMOS DOSIMETERS WITH THICK GATE OXIDE , 1995 .

[10]  Kyoung-Wook Min,et al.  Model-data comparison of total dose experiment on KITSAT-1 , 2002 .

[11]  J Cygler,et al.  Evaluation of a dual bias dual metal oxide-silicon semiconductor field effect transistor detector as radiation dosimeter. , 1994, Medical physics.

[12]  Yugo Kimoto,et al.  Total dose orbital data by dosimeter onboard Tsubasa (MDS-1) satellite , 2003 .

[13]  A. Holmes-Siedle,et al.  The Dose mapping system for the electromagnetic calorimeter of the BaBar experiment at SLAC , 2001 .

[14]  M. Pejovic,et al.  P‐channel metal–oxide–semiconductor dosimeter fading dependencies on gate bias and oxide thickness , 1995 .

[15]  G. Sarrabayrouse,et al.  Assessment of a new p-MOSFET usable as a doserate insensitive gamma dose sensor , 1995 .

[16]  N. Sultan,et al.  Applications of MOSFET dosimeters on MIR and BION satellites , 1997 .

[17]  S.J. Kim,et al.  Enhanced low dose rate sensitivity (ELDRS) observed in RADFET sensor , 2003, Proceedings of the 7th European Conference on Radiation and Its Effects on Components and Systems, 2003. RADECS 2003..

[18]  M. Buehler,et al.  CRRES microelectronic test chip , 1991 .

[19]  Ninoslav Stojadinovic,et al.  The contribution of border traps to the threshold voltage shift in pMOS dosimetric transistors , 1995 .

[20]  M. Pejovic,et al.  pMOS dosimetric transistors with two-layer gate oxide , 1997 .