Theoretical analysis of the optimum energy band gap of semiconductors for fabrication of solar cells for applications in higher latitudes locations

In this work some results of theoretical analysis on the selection of optimum band gap semiconductor absorbers for application in either single or multijunction (up to five junctions) solar cells are presented. For calculations days have been taken characterized by various insolation and ambient temperature conditions defined in the draft of the IEC 61836 standard (Performance testing and energy rating of terrestrial photovoltaic modules) as a proposal of representative set of typical outdoor conditions that may influence performance of photovoltaic devices. Besides various irradiance and ambient temperature ranges, these days additionally differ significantly regarding spectral distribution of solar radiation incident onto horizontal surface. Taking these spectra into account optimum energy band gaps and maximum achievable efficiencies of single and multijunction solar cells made have been estimated. More detailed results of analysis performed for double junction cell are presented to show the effect of deviations in band gap values on the cell efficiency.

[1]  M. Yamaguchi Multi-junction solar cells and novel structures for solar cell applications , 2002 .

[2]  D. L. King,et al.  Analysis of factors influencing the annual energy production of photovoltaic systems , 2002, Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002..

[3]  M. Green Third generation photovoltaics : advanced solar energy conversion , 2006 .

[4]  Antonio Luque,et al.  Theoretical Limits of Photovoltaic Conversion , 2005 .

[5]  J. Loferski,et al.  Theoretical Considerations Governing the Choice of the Optimum Semiconductor for Photovoltaic Solar Energy Conversion , 1956 .

[6]  Martin A. Green,et al.  Third generation photovoltaics: solar cells for 2020 and beyond , 2002 .

[7]  Keith Emery,et al.  Spectral effects on PV-device rating , 1992 .

[8]  X. Deng,et al.  Amorphous silicon and silicon germanium materials for high-efficiency triple-junction solar cells , 2000 .

[9]  Arindam Banerjee,et al.  Amorphous silicon based photovoltaics—from earth to the “final frontier” , 2003 .

[10]  Martin A. Green,et al.  Third generation photovoltaics , 2002, 2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601).

[11]  Stephen J. Fonash,et al.  太阳电池器件物理 = Solar cell device physics , 1982 .

[12]  M. J. Kearney,et al.  Experimental investigation of spectral effects on amorphous silicon solar cells in outdoor operation , 2002, Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002..