论文信息 - Donor levels and the microscopic structure of the DX center in n-type Si-doped AlxGa0.51-xIn0.49P grown by molecular-beam epitaxy. - 字舞流文

Donor levels and the microscopic structure of the DX center in n-type Si-doped AlxGa0.51-xIn0.49P grown by molecular-beam epitaxy.

Saarinen | Hakkarainen | Kauppinen | Paalanen | Hautojärvi | Laine | Partanen | Mäkinen | Pessa | Vänttinen | Tappura | Asonen | Likonen