New simulation and measurement results on gateable DEPFET devices

To improve the signal to noise level, devices for optical and x-ray astronomy use techniques to suppress background events. Well known examples are e.g. shutters or frame-store Charge Coupled Devices (CCDs). Based on the DEpleted P-channel Field Effect Transistor (DEPFET) principle a so-called Gatebale DEPFET detector can be built. Those devices combine the DEPFET principle with a fast built-in electronic shutter usable for optical and x-ray applications. The DEPFET itself is the basic cell of an active pixel sensor build on a fully depleted bulk. It combines internal amplification, readout on demand, analog storage of the signal charge and a low readout noise with full sensitivity over the whole bulk thickness. A Gatebale DEPFET has all these benefits and obviates the need for an external shutter. Two concepts of Gatebale DEPFET layouts providing a built-in shutter will be introduced. Furthermore proof of principle measurements for both concepts are presented. Using recently produced prototypes a shielding of the collection anode up to 1 • 10−4 was achieved. Predicted by simulations, an optimized geometry should result in values of 1 • 10−5 and better. With the switching electronic currently in use a timing evaluation of the shutter opening and closing resulted in rise and fall times of 100ns.