论文信息 - Investigation of traps producing current collapse in AlGaN/GaN high electron mobility transistors

Investigation of traps producing current collapse in AlGaN/GaN high electron mobility transistors

Current collapse in AlGaN/GaN HEMTs has been investigated using photo-ionisation spectroscopy techniques to probe the spatial origins of the traps producing this effect. The results indicate that the responsible traps reside in the high-resistivity GaN buffer layer and are identical to those traps causing current collapse in GaN MESFETs.

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