Piezoelectric actuation of (GaN/)AlGaN/GaN heterostructures
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Andreas Schober | Oliver Ambacher | Volker Cimalla | Rüdiger Goldhahn | Gerhard Gobsch | C. Buchheim | Katja Tonisch | O. Ambacher | G. Gobsch | V. Cimalla | A. Schober | R. Goldhahn | F. Niebelschütz | F. Niebelschütz | K. Tonisch | C. Buchheim
[1] Lester F. Eastman,et al. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures , 1999 .
[2] Oliver Ambacher,et al. Growth and applications of Group III-nitrides , 1998 .
[3] Uwe Rossow,et al. Dielectric function and critical points of the band structure for AlGaN alloys , 2005 .
[4] Amit K. Gupta,et al. Single virus particle mass detection using microresonators with nanoscale thickness , 2004 .
[5] Jacek A. Majewski,et al. Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures , 2002 .
[6] O. Ambacher,et al. Piezoresponse force microscopy for polarity imaging of GaN , 2002 .
[7] B. Jogai,et al. Influence of surface states on the two-dimensional electron gas in AlGaN/GaN heterojunction field-effect transistors , 2003 .
[8] Harold G. Craighead,et al. Virus detection using nanoelectromechanical devices , 2004 .
[9] H. Craighead,et al. Attogram detection using nanoelectromechanical oscillators , 2004 .
[10] P. Muralt,et al. Thickness dependence of the properties of highly c-axis textured AlN thin films , 2004 .
[11] Chr Edelmann,et al. Miniaturized vacuum gauges , 2004 .
[12] M. Eickhoff,et al. Determination of the polarization discontinuity at the AlGaN∕GaN interface by electroreflectance spectroscopy , 2005 .
[13] Y. Morilla,et al. Comparative study of c-axis AlN films sputtered on metallic surfaces , 2005 .
[14] O. Ambacher,et al. Pulsed mode operation of strained microelectromechanical resonators in air , 2006 .
[16] O. Ambacher,et al. Electric field distribution in GaN∕AlGaN∕GaN heterostructures with two-dimensional electron and hole gas , 2008 .
[17] A. Kingon,et al. Measurement of the effective piezoelectric constant of nitride thin films and heterostructures using scanning force microscopy , 2001 .
[18] Martin Eickhoff,et al. Piezoresistivity of AlxGa1−xN layers and AlxGa1−xN/GaN heterostructures , 2001 .
[19] Electromechanical coupling in free-standing AlGaN/GaN planar structures , 2003, cond-mat/0306323.
[20] S. Muensit,et al. Extensional piezoelectric coefficients of gallium nitride and aluminum nitride , 1999 .
[21] R. T. Webster,et al. Bias induced strain in AlGaN∕GaN heterojunction field effect transistors and its implications , 2006 .
[22] Charles Surya,et al. Piezoelectric coefficient of aluminum nitride and gallium nitride , 2000 .
[23] S. S. Park,et al. Effects of hydrostatic and uniaxial stress on the Schottky barrier heights of Ga-polarity and N-polarity n-GaN , 2004 .
[24] K. Korona,et al. Electroreflectance and photoreflectance spectra of tricolor III‐nitride detector structures , 2007 .
[25] João Pedro Conde,et al. Electrostatically actuated resonance of amorphous silicon microresonators in water , 2006 .
[26] Peter Veit,et al. Metalorganic chemical vapor phase epitaxy of gallium-nitride on silicon , 2003 .
[27] Hadis Morkoç,et al. Effect of hydrostatic pressure on the dc characteristics of AlGaN∕GaN heterojunction field effect transistors , 2006 .
[28] M. R. Freeman,et al. Multifunctional Nanomechanical Systems via Tunably Coupled Piezoelectric Actuation , 2007, Science.
[29] I. L. Guy,et al. The piezoelectric coefficient of gallium nitride thin films , 1998 .
[30] Oliver Ambacher,et al. Piezoelectric properties of polycrystalline AlN thin films for MEMS application , 2006 .
[31] D. DeVoe,et al. Piezoelectric bfmorph transducers based on single crystal AL/sub 0.3/Ga/sub 0.7/AS films , 2005, 18th IEEE International Conference on Micro Electro Mechanical Systems, 2005. MEMS 2005..
[32] Toshio Kamiya,et al. Calculation of Crystal Structures, Dielectric Constants and Piezoelectric Properties of Wurtzite-Type Crystals Using Ab-Initio Periodic Hartree-Fock Method , 1996 .
[33] Amir Dabiran,et al. Effects of hydrostatic and uniaxial stress on the conductivity of p-type GaN epitaxial layer , 2002 .
[34] O. Ambacher,et al. Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications , 2007 .
[35] Don L. DeVoe,et al. Piezoelectric thin film micromechanical beam resonators , 2001 .
[36] H. Craighead,et al. Enumeration of DNA molecules bound to a nanomechanical oscillator. , 2005, Nano letters.
[37] Michael J. Uren,et al. Structural and electrical characterization of AuTiAlTi/AlGaN/GaN ohmic contacts , 2002 .
[38] E. Kohn,et al. Piezoelectric GaN sensor structures , 2006, IEEE Electron Device Letters.