40Gbit/s germanium waveguide photodetector on silicon

We report a Germanium lateral pin photodiode integrated with selective epitaxy at the end of silicon waveguide. A very high optical bandwidth estimated at 120GHz is shown, with internal responsivity as high as 0.8A/W at 1550nm wavelength. Open eye diagram at 40Gb/s was obtained under zero-bias at wavelength of 1.55μm.

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