A new 2-D GaAs MESFETs model based on a very accurate velocity - field expression

A new physical model for GaAs MESFET drain current and gate capacitance based on the Chang-Fetterman velocity-electric field model, is presented. Accurate analytical expressions for the 2-D channel potential in the saturation region are adequately employed and mathematically manipulated in order to develop a 2-D C-V physical MESFET model without the main approximations used up to now in the previous physical models.