Metamorphic InGaAs Quantum Well Laser Diodes at 1.5μm on GaAs Grown by Molecular Beam Epitaxy

National Natural Science Foundation of China 60607016 60625405National Basic Research Programme of China National High Technology Research and Development Programme of China Supported partly by the National Natural Science Foundation of China under Grand Nos 60607016 and 60625405, the National Basic Research Programme of China and the National High Technology Research and Development Programme of China.

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