A CDM-like damage mechanism for multiple power domains fabricated with Deep N-well processes

In this paper, a mechanism of CDM (Charged-Device Model) — like damage is observed across separated power domain interfaces fabricated with DNW (Deep N-well) processes. This mechanism is modeled and validated by test patterns in a 40nm logic process and by SPICE simulation. The damage mechanism is found to be unlike the traditional CDM and can be observed in wafer form, which means that such damage should be generated during the chip fabrication process. Prevention of damage is proposed and verified.

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