Memristors for digital, memory and neuromorphic circuits

The Memristor, as the newly discovered fourth circuit element, is being used in many applications such as memory and digital circuits, as well as neuromorphic systems. The unique characteristics of the memristor: retaining its resistance state, ability to behave as a switch and consequently the possibility to be used in both memory and digital circuits. Its resistance can also change gradually allowing the potential of mimicking neural chemical synapses. These applications of the memristor will be reviewed and discussed using a nonlinear mathematical model of physical bipolar memristor devices.

[1]  Farnood Merrikh-Bayat,et al.  Bottleneck of using a single memristive device as a synapse , 2013, Neurocomputing.

[2]  J. Joshua Yang,et al.  Progress in CMOS-memristor integration , 2011, 2011 IEEE/ACM International Conference on Computer-Aided Design (ICCAD).

[3]  Leon O. Chua,et al.  Memristor Bridge Synapses , 2012, Proceedings of the IEEE.

[4]  Olivier Bichler,et al.  Phase change memory as synapse for ultra-dense neuromorphic systems: Application to complex visual pattern extraction , 2011, 2011 International Electron Devices Meeting.

[5]  J. Yang,et al.  Memristive switching mechanism for metal/oxide/metal nanodevices. , 2008, Nature nanotechnology.

[6]  Gregory S. Snider,et al.  Spike-timing-dependent learning in memristive nanodevices , 2008, 2008 IEEE International Symposium on Nanoscale Architectures.

[7]  Leon O. Chua,et al.  Memristors: A New Nanoscale CNN Cell , 2010 .

[8]  E. Lehtonen,et al.  CNN using memristors for neighborhood connections , 2010, 2010 12th International Workshop on Cellular Nanoscale Networks and their Applications (CNNA 2010).

[9]  Yusuf Leblebici,et al.  Multiterminal Memristive Nanowire Devices for Logic and Memory Applications: A Review , 2012, Proceedings of the IEEE.

[10]  Jeyavijayan Rajendran,et al.  Leveraging Memristive Systems in the Construction of Digital Logic Circuits , 2012, Proceedings of the IEEE.

[11]  J. Yang,et al.  Switching dynamics in titanium dioxide memristive devices , 2009 .

[12]  Bernabé Linares-Barranco,et al.  Memristance can explain Spike-Time-Dependent-Plasticity in Neural Synapses , 2009 .

[13]  R. Williams,et al.  Exponential ionic drift: fast switching and low volatility of thin-film memristors , 2009 .

[14]  Wei Yang Lu,et al.  Nanoscale memristor device as synapse in neuromorphic systems. , 2010, Nano letters.

[15]  L. Chua Memristor-The missing circuit element , 1971 .

[16]  Christofer Toumazou,et al.  A review on memristive devices and applications , 2010, 2010 17th IEEE International Conference on Electronics, Circuits and Systems.

[17]  Mircea R. Stan,et al.  Design and analysis of crossbar circuits for molecular nanoelectronics , 2002, Proceedings of the 2nd IEEE Conference on Nanotechnology.

[18]  S. P. Mohanty,et al.  Memristor: From Basics to Deployment , 2013, IEEE Potentials.

[19]  Kyoobin Lee,et al.  Synaptic behaviors of a single metal–oxide–metal resistive device , 2011 .

[20]  K. Eshraghian,et al.  The fourth element: characteristics, modelling and electromagnetic theory of the memristor , 2010, Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences.

[21]  Eugenijus Kaniusas Biomedical Signals and Sensors I , 2012 .

[22]  Kuk-Hwan Kim,et al.  Si Memristive devices applied to memory and neuromorphic circuits , 2010, Proceedings of 2010 IEEE International Symposium on Circuits and Systems.