论文信息 - An empirical growth window concerning the input ratio of HCl/SiH4 gases in filling 4H-SiC trench by CVD - 字舞流文

An empirical growth window concerning the input ratio of HCl/SiH4 gases in filling 4H-SiC trench by CVD

K. Kojima | H. Okumura | S. Ji | Y. Yonezawa | S. Yoshida | K. Mochizuki | S. Saito | R. Kosugi | A. Nagata | Yasuko Matsukawa | S. Yoshida