Illumination with solid state lighting technology
暂无分享,去创建一个
Paul S. Martin | R. Fletcher | D. Steigerwald | J. Bhat | D. Collins | M. O. Holcomb | M. Ludowise | S. Rudaz
[1] N. Holonyak,et al. COHERENT (VISIBLE) LIGHT EMISSION FROM Ga(As1−xPx) JUNCTIONS , 1962 .
[2] Jerry M. Woodall,et al. EFFICIENT VISIBLE ELECTROLUMINESCENCE AT 300°K FROM Ga1‐xAlxAs p‐n JUNCTIONS GROWN BY LIQUID‐PHASE EPITAXY , 1967 .
[3] Gunther Wyszecki,et al. Color Science: Concepts and Methods, Quantitative Data and Formulae, 2nd Edition , 2000 .
[4] S. Koike,et al. High efficient GaAlAs light‐emitting diodes of 660 nm with a double heterostructure on a GaAlAs substrate , 1983 .
[5] H. Amano,et al. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer , 1986 .
[6] R. Fletcher,et al. High performance AlGaInP visible light‐emitting diodes , 1990 .
[7] Shuji Nakamura,et al. GaN Growth Using GaN Buffer Layer , 1991 .
[8] Hydrogen in III-V Device Structures , 1993 .
[9] R. Street,et al. Activation of acceptors in Mg-doped GaN grown by metalorganic chemical vapor deposition , 1996 .
[10] F. A. Kish,et al. Wafer bonding of 50‐mm diameter GaP to AlGaInP‐GaP light‐emitting diode wafers , 1996 .
[11] G.E. Moore,et al. Cramming More Components Onto Integrated Circuits , 1998, Proceedings of the IEEE.
[12] M. Krames,et al. Chapter 2 High-Efficiency AlGalnP Light-Emitting Diodes , 1999 .
[13] T. S. Tan,et al. High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency , 1999 .
[14] Robert V. Steele,et al. High-brightness LED market overview , 2001, SPIE Optics + Photonics.
[15] Michael R. Krames,et al. High-power AlGaInN flip-chip light-emitting diodes , 2001 .
[16] Michael R. Krames,et al. High-power phosphor-converted light-emitting diodes based on III-Nitrides , 2002 .
[17] M. Pashley,et al. Red, green, and blue LEDs for white light illumination , 2002 .