This article reports on a novel fabrication technique for T‐shaped short gates using double‐layer electron‐beam(EB) resist system, which provides uniform gate length across 2‐in. wafers. In the proposed novel fabrication technique, a 1‐μm PMMA(I)/0.25‐μm PMMA(II) (HI/LOW MW) double‐layer resist system is adopted to fabricate T‐shaped gates. To avoid the influence of scattered electrons, the bottom PMMA(II) resist is EB‐exposed through the top opening with an acceleration of 50 or 25 kV and a single‐path line dose of 0.8–2.0 nC/cm. The top opening has been formed with a 25‐kV Gaussian electron beam at a 120 μC/cm2 dosage. The developed technique has accomplished T‐shaped gates with 70‐nm minimum footprint and 0.1–0.2‐μm T‐shaped gates, whose yield is over 80% on wafers.