论文信息 - High performance AlGaN/GaN HEMT with improved ohmic contacts

High performance AlGaN/GaN HEMT with improved ohmic contacts

Various metal films and rapid thermal annealing conditions were investigated to improve the ohmic contact to AlGaN/GaN heterostuctures. Less than 1 /spl Theta/mm contact resistance has been obtained reproducibly. Our best contact resistivity reaches 0.039 /spl Theta/mm, corresponding to a contact resistance of 5.38/spl times/10/sup 8//spl Theta/cm/sup 2/. The fabricated high electron mobility transistors with a 0.25 /spl mu/m length gate exhibit a cutoff frequency f/sub T/ of 60 GHz and an f/sub max/ of 100 GHz.

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