L-band internally matched Si-MMIC low noise amplifier

A Si-MMIC low noise amplifier (LNA), fabricated in conventional 0.8 /spl mu/m Bi-CMOS process, was developed. This LNA is monolithically integrated on a low resistive Si substrate with coplanar waveguide (CPW) type matching circuits. At 1.9 GHz, noise figure of 2.7 dB and gain of 10 dB were obtained at 2 V/2 mA d.c. supply.