Direct bandgap type-I GeSn/GeSn quantum well on a GeSn- and Ge- buffered Si substrate
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R. Soref | Jifeng Liu | J. Margetis | W. Du | M. Mortazavi | J. Tolle | Shui-Qing Yu | W. Dou | Greg Sun | Yiyin Zhou | Baohua Li | A. Kuchuk | P. Grant | G. Abernathy | G. Sun