InP MISFETs with SiO/sub 2/ gate insulator deposited by distributed electron cyclotron resonance plasma deposition
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D. Barbier | P. Viktorovitch | J. Tardy | B. Agius | J. Dupin | F. Plais | V. Drouot | I. Thomas
[1] B. Agius,et al. Electrical properties of distributed electron cyclotron resonance plasma-deposited SiO2-InP diodes , 1991 .
[2] P. Viktorovitch,et al. Long-term stability of InP MIS devices , 1991 .
[3] D. Gutierrez,et al. Channel mobility enhancement in InP metal-insulator-semiconductor field-effect transistors , 1985 .
[4] L. Messick,et al. An InP MISFET with a power density of 1.8 W/mm at 30 GHz , 1990, IEEE Electron Device Letters.