Electroreflectance and Photoluminescence Studies of In1-xGaxP1-yAsy Lattice-Matched to GaAs
暂无分享,去创建一个
[1] K. Hiramatsu,et al. Characterization of Interface Instability in InGaAsP LPE Growth on GaAs by Fourier Analysis , 1985 .
[2] Y. Hamakawa,et al. A Study on LPE Growth of In1-xGaxP1-yAsy(y ≃0) on (100) GaAs Substrate , 1985 .
[3] Y. Hamakawa,et al. LPE Growth of In1-xGaxP0.96As0.04 on GaAs Substrate by Two-Phase Melt Method. , 1985 .
[4] K. Hiramatsu,et al. LPE Growth and Surface Morphology of InxGa1-xAsyP1-y (y≤0.01) on (100) GaAs , 1984 .
[5] L. Eastman,et al. Electroreflectance investigation of (Ga1−xAlx)0.47In0.53As lattice matched to InP , 1983 .
[6] H. Matsunami,et al. A Reproducible LPE Growth of High-Quality In1-xGaxP1-yAsy Layers on GaAs by the Control of Phosphorus Vapor on the Substrate , 1982 .
[7] H. Kawanishi,et al. LPE growth of In0.48Ga0.52As0.01P0.99 lattice-matched to GaAs from an In melt rich in P , 1982 .
[8] P. M. Laufer,et al. Electroreflectance investigation of In1−xGaxAsyP1−y lattice-matched to InP , 1980 .
[9] Y. Hamakawa,et al. Bandgap Energy of InGaAsP Quaternary Alloy , 1980 .
[10] H. Matsunami,et al. Lattice-Matched LPE Growth of In1-xGaxP1-yAsy Layers on (100) GaAs Substrates , 1980 .
[11] B. Seraphin. Optical Properties of Solids: New Developments , 1976 .