Feedback control of plasma etching reactors for improved etching uniformity

[1]  P. Khargonekar,et al.  Real-time estimation of patterned wafer parameters using in situ spectroscopic ellipsometry , 1999, Proceedings of the 1999 IEEE International Conference on Control Applications (Cat. No.99CH36328).

[2]  P. Christofides,et al.  Plasma enhanced chemical vapor deposition: Modeling and control , 1999 .

[3]  Tyrone L. Vincent,et al.  Combined Real‐Time and Run‐to‐Run Control of Etch Depth and Spatial Uniformity in Plasma Etching , 1997 .

[4]  Thomas F. Edgar,et al.  Modeling of Plasma Etch Systems Using Ordinary Least Squares, Recurrent Neural Network, and Projection to Latent Structure Models , 1997 .

[5]  H. Neitzert,et al.  In situ thickness control during plasma deposition of hydrogenated amorphous silicon films by time-resolved microwave conductivity measurements. , 1995, Applied optics.

[6]  S. Saxena,et al.  A monitor wafer based controller for semiconductor processes , 1994 .

[7]  Thomas F. Edgar,et al.  Development of Techniques for Real‐Time Monitoring and Control in Plasma Etching II . Multivariable Control System Analysis of Manipulated, Measured, and Performance Variables , 1991 .

[8]  Demetre J. Economou,et al.  A mathematical model for etching of silicon using CF4 in a radial flow plasma reactor , 1991 .

[9]  K. J. McLaughlin,et al.  Development of Techniques for Real‐Time Monitoring and Control in Plasma Etching I . Response Surface Modeling of and Etching of Silicon and Silicon Dioxide , 1991 .

[10]  D. J. Economou,et al.  Numerical Simulation of a Single‐Wafer Isothermal Plasma Etching Reactor , 1990 .

[11]  K. J. McLaughlin,et al.  Development of Techniques for Real-Time Monitoring and Control in Plasma Etching , 1990, 1990 American Control Conference.

[12]  Boeuf,et al.  Transition between different regimes of rf glow discharges. , 1990, Physical review. A, Atomic, molecular, and optical physics.

[13]  D. J. Economou,et al.  Uniformity of Etching in Parallel Plate Plasma Reactors , 1989 .

[14]  Thomas F. Edgar,et al.  Effect of Flow Direction on Etch Uniformity in Parallel‐Plate (Radial Flow) Isothermal Plasma Reactors , 1987 .

[15]  I. C. Plumb,et al.  A model of the chemical processes occurring in CF4/O2 discharges used in plasma etching , 1986 .

[16]  I. C. Plumb,et al.  A model for the etching of Si in CF4 plasmas: Comparison with experimental measurements , 1986 .

[17]  Daniel L. Flamm,et al.  Computer simulation of a CF4 plasma etching silicon , 1984 .

[18]  Vincent M. Donnelly,et al.  Basic chemistry and mechanisms of plasma etching , 1983 .

[19]  Vincent M. Donnelly,et al.  The reaction of fluorine atoms with silicon , 1981 .

[20]  K. Kobe.  The properties of gases and liquids , 1959 .