Electrical properties of metal-ferroelectric-insulator-semiconductor structures based on ferroelectric polyvinylidene fluoride copolymer film gate for nonvolatile random access memory application

Metal-ferroelectric–insulator-semiconductor device structures with ferroelectric vinylidene fluoride-trifluoroethylene copolymer and SiO2 buffer layer integrated gate stack over n-Si are formed, and their potential for fabricating polymeric nonvolatile random access memory devices is demonstrated. Capacitance-voltage (C–V) studies show that switchable polarization in poled polyvinylidene fluoride PVDF copolymer film changes the Si-surface potential and causes modulation of the Si-surface conductance. The (C–V) hysteresis and bidirectional flatband voltage shift at −10 to +6V, depending on the polarization field direction and remnant polarization at the ferroelectric PVDF copolymer gate, presents a memory window. The space charge at n-Si and switchable polarization both reduce the field across the ferroelectric PVDF. The observed asymmetry of the negative flatband-voltage shifts in the negatively poled ferroelectric polymer state is the result of the depletion layer formation, which reduces the field acros...

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