Gate Circuit Layout Optimization of Power Module Regarding Transient Current Imbalance
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J.L. Schanen | R. Pasterczyk | J.M. Guichon | C. Martin | J. Schanen | J. Guichon | R. Pasterczyk | C. Martin
[1] Edith Clavel,et al. Power integration: electrical analysis of new emerging package , 2003 .
[2] D. Frey,et al. Impedance criterion for power modules comparison , 2006, IEEE Transactions on Power Electronics.
[3] A. R. Hefner,et al. An experimentally verified IGBT model implemented in the Saber circuit simulator , 1991 .
[4] Jean-Luc Schanen,et al. Comparative study of new emerged packages for high-power IGBT modules , 2004 .
[5] Albert E. Ruehli,et al. Three-dimensional interconnect analysis using partial element equivalent circuits , 1992 .
[6] H. Morel,et al. State variable modeling of the power pin diode using an explicit approximation of semiconductor device equations: a novel approach , 1994 .
[7] J.L. Schanen,et al. Inside a power module , 2004, Conference Record of the 2004 IEEE Industry Applications Conference, 2004. 39th IAS Annual Meeting..
[8] D. Boroyevich,et al. Electrical and thermal layout design considerations for integrated power electronics modules , 2002, Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344).
[9] E. Clavel,et al. Original cabling conditions to insure balanced current during switching transitions between paralleled semiconductors , 1999, Conference Record of the 1999 IEEE Industry Applications Conference. Thirty-Forth IAS Annual Meeting (Cat. No.99CH36370).