Single event upset and latchup measurements in avionics devices using the WNR neutron beam and a new neutron-induced latchup model

Microelectronic devices used in avionics were tested in the WNR beam, simulating atmospheric neutrons. The SEU upset rates for ARINC 429 receivers agree with rates in memories, and neutron-induced latchup was measured in the LCA100 K and 200 K gate arrays and compared against a new neutron-induced latchup model.