Performance of silicon carbide devices in power converters

This paper describes the characterization of the performance of a 100 V/1 A SiC p-n diode and a 50 V/0.5 A SiC JFET in a DC-DC buck converter. A fundamental study of material defects and process techniques in SiC is needed for significant material purification. The nonidealities of device operation are clearly indicated, and the impact on buck converter operation is described. Improved device design and fabrication techniques are required for further improvement in device performance.