Characterization, modeling of 10-kV SiC JBS diodes and their application prospect in X-ray generators

The 10-kV Silicon Carbide (SiC) Junction Barrier Schottky (JBS) diodes are currently being developed by a number of organizations in the United States with the aim to enable their applications in high voltage power conversions. The aim of this paper is to characterize and model the 10-kV SiC JBS diode so that their prospect and benefits in power electronic systems can be provided. Using the SPICE model of the 10-kV 5A SiC JBS diode, the advantages of 10-kV SiC JBS diodes in the application of X-ray generators were shown by PSPICE simulations for the first time. The simulation results predict that the 10-kV SiC JBS diodes based high voltage rectifiers in X-ray generators can greatly reduce the number of series diodes required and power loss than compared to the 1-kV silicon ultra fast recovery diodes based rectifiers.