A Novel Isolation Scheme featuring Cavities in the Collector for a High-Speed 0.13μm SiGe:C BiCMOS Technology

A novel isolation scheme is presented in this work, which uses oxide filled cavities in the collector to separate the extrinsic base and collector regions. When incorporated in our 0.13μm SiGe:C BiCMOS technology, a further improvement of the device RF performance is obtained, yielding devices with fT/fmax values of 210/290GHz and 255/210GHz.

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