0.9 V DSP blocks: a 15 ns 4 K SRAM and a 45 ns 16-bit multiply/accumulator
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[1] H. Greub,et al. A 500 ps 32 /spl times/ 8 register file implemented in GaAs/AlGaAs HBTs [F-RISC/G processor] , 1993, 15th Annual GaAs IC Symposium.
[2] Richard B. Brown,et al. An asynchronous GaAs MESFET static RAM using a new current mirror memory cell , 1993 .
[3] W. C. Terrell,et al. Direct replacement of silicon ECL and TTL SRAMs with high performance GaAs devices , 1988, 10th Annual IEEE (GaAs IC) Symposium, Gallium Arsenide Integrated Circuit. Technical Digest 1988..
[4] I. R. Mactaggart,et al. A 4 kbit synchronous static random access memory based upon delta-doped complementary heterostructure insulated gate field effect transistor technology , 1991, [1991] GaAs IC Symposium Technical Digest.
[5] D. E. Grider,et al. Development of static random access memories using complementary heterostructure insulated gate field effect transistor technology , 1990, 12th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC).
[6] Carl L. Shurboff,et al. A manufacturable complementary GaAs process , 1993, 15th Annual GaAs IC Symposium.
[7] C.A.T. Salama,et al. GaAs Schmitt trigger memory cell design , 1993 .
[8] Minoru Noda,et al. A 7ns/850mW GaAs 4Kb SRAM Fully Operative at 75OC , 1988 .