Near-surface damage and mixing in Si-Cl2-Ar atomic layer etching processes: Insights from molecular dynamics simulations
暂无分享,去创建一个
[1] V. M. Donnelly,et al. Real-time monitoring of atomic layer etching in Cl2/Ar pulsed gas, pulsed power plasmas by optical emission spectroscopy , 2023, Journal of Vacuum Science & Technology A.
[2] D. Kim,et al. Atomic Layer Etching Applications in Nano-Semiconductor Device Fabrication , 2023, Electronic Materials Letters.
[3] D. Graves,et al. Modification of a force field for molecular dynamics simulations of silicon etching by chlorine atoms , 2022, Journal of Vacuum Science & Technology A.
[4] K. Karahashi,et al. Foundations of atomic-level plasma processing in nanoelectronics , 2022, Plasma Sources Science and Technology.
[5] D. Graves,et al. Molecular dynamics study of silicon atomic layer etching by chorine gas and argon ions , 2022, Journal of Vacuum Science & Technology B.
[6] S. Hamaguchi,et al. Surface damage formation during atomic layer etching of silicon with chlorine adsorption , 2021, Journal of Vacuum Science & Technology A.
[7] R. Gottscho,et al. Atomic Layer Etching: Rethinking the Art of Etch. , 2018, The journal of physical chemistry letters.
[8] Jane P. Chang,et al. Achieving atomistic control in materials processing by plasma–surface interactions , 2017 .
[9] S. Sriraman,et al. Atomic layer etching of 3D structures in silicon: Self-limiting and nonideal reactions , 2017 .
[10] R. Gottscho,et al. Overview of atomic layer etching in the semiconductor industry , 2015 .
[11] W. Kessels,et al. Amorphization of Si(100) by Ar+-ion bombardment studied with spectroscopic and time-resolved second-harmonic generation , 2010 .
[12] D. Humbird,et al. Molecular dynamics simulations of Ar + bombardment of Si with comparison to experiment , 2007 .
[13] G. Yeom,et al. Surface Analysis of Atomic-Layer-Etched Silicon by Chlorine , 2007 .
[14] W. Kessels,et al. Amorphous silicon layer characteristics during 70-2000 eV Ar+-ion bombardment of Si(100) , 2006 .
[15] G. Yeom,et al. Surface Roughness Variation during Si Atomic Layer Etching by Chlorine Adsorption Followed by an Ar Neutral Beam Irradiation , 2005 .
[16] D. Lee,et al. Atomic Layer Etching of Si(100) and Si(111) Using Cl2 and Ar Neutral Beam , 2005 .
[17] Lourdes Pelaz,et al. Ion-beam-induced amorphization and recrystallization in silicon , 2004 .
[18] D. Graves,et al. Improved interatomic potentials for silicon-fluorine and silicon-chlorine. , 2004, The Journal of chemical physics.
[19] Donald W. Brenner,et al. A second-generation reactive empirical bond order (REBO) potential energy expression for hydrocarbons , 2002 .
[20] Y. Yamamura,et al. ENERGY DEPENDENCE OF ION-INDUCED SPUTTERING YIELDS FROM MONATOMIC SOLIDS AT NORMAL INCIDENCE , 1996 .
[21] Y. Sawada,et al. Substrate orientation dependence of self-limited atomic-layer etching of Si with chlorine adsorption and low-energy Ar+ irradiation , 1994 .
[22] Y. Sawada,et al. Self‐limited layer‐by‐layer etching of Si by alternated chlorine adsorption and Ar+ ion irradiation , 1993 .
[23] C. Vieu,et al. Cross‐sectional high‐resolution electron microscopy investigation of argon‐ion implantation‐induced amorphization of silicon , 1988 .
[24] D. J. Oostra,et al. Near threshold sputtering of Si and SiO2 in a Cl2 environment , 1987 .
[25] H. Berendsen,et al. Molecular dynamics with coupling to an external bath , 1984 .
[26] P. Zalm. Some useful yield estimates for ion beam sputtering and ion plating at low bombarding energies , 1984 .
[27] T. Lohner,et al. An investigation of ion-bombarded silicon by ellipsometry and channeling effect , 1982 .
[28] A. Silfhout,et al. The influence of argon ion bombardment on the electrical and optical properties of clean silicon surfaces , 1981 .
[29] G. Müller,et al. The crystalline-to-amorphous transition in ion-bombarded silicon , 1980 .
[30] Gert Moliere,et al. Theorie der Streuung schneller geladener Teilchen I. Einzelstreuung am abgeschirmten Coulomb-Feld , 1947 .
[31] Hcm Harm Knoops,et al. Atomic Layer Etching: What Can We Learn from Atomic Layer Deposition? , 2015 .
[32] G. Oehrlein,et al. Atomic Layer Etching at the Tipping Point: An Overview , 2015 .
[33] Patricio E. Romero,et al. Atomic Layer Etching: An Industry Perspective , 2015 .
[34] A. Stukowski. Modelling and Simulation in Materials Science and Engineering Visualization and analysis of atomistic simulation data with OVITO – the Open Visualization Tool , 2009 .
[35] F. Morehead,et al. Formation of Amorphous Silicon by Ion Bombardment as a Function of Ion, Temperature, and Dose , 1972 .
[36] R. S. Nelson,et al. Observation of ion bombardment damage in silicon , 1968 .