Analysis of breakdown probabilities in avalanche photodiodes using a history-dependent analytical model
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Joe C. Campbell | Xiaoguang Zheng | Shuling Wang | Gauri V. Karve | J. Campbell | Xiaoguang G. Zheng | Shuling Wang | G. Karve | Feng Ma | Xiaowei Li | Xiaowei Li | F. Ma
[1] Joe C. Campbell,et al. Multiplication noise of AlxGa1−xAs avalanche photodiodes with high Al concentration and thin multiplication region , 2001 .
[2] R. Mcintyre. Multiplication noise in uniform avalanche diodes , 1966 .
[3] A. Lacaita,et al. Avalanche photodiodes and quenching circuits for single-photon detection. , 1996, Applied optics.
[4] C. Hu,et al. A new look at impact ionization-Part II: Gain and noise in short avalanche photodiodes , 1999 .
[5] R. J. McIntyre,et al. A new look at impact ionization-Part I: A theory of gain, noise, breakdown probability, and frequency response , 1999 .
[6] J. Campbell,et al. Calculation of gain and noise with dead space for GaAs and Al/sub x/Ga/sub 1-x/As avalanche photodiode , 2002 .
[7] R. J. McIntyre,et al. On the avalanche initiation probability of avalanche diodes above the breakdown voltage , 1973 .
[8] W. Oldham,et al. Triggering phenomena in avalanche diodes , 1972 .
[9] J. David,et al. The merits and limitations of local impact ionization theory [APDs] , 2000 .
[10] J. Allam. “Universal” Dependence of Avalanche Breakdown on Bandstructure: Choosing Materials for High-Power Devices , 1997 .
[11] F Zappa,et al. Single-photon detection beyond 1 µm: performance of commercially available InGaAs/lnP detectors. , 1996, Applied optics.
[12] A. Walker,et al. Performance and design of InGaAs /InP photodiodes for single-photon counting at 1.55 microm. , 2000, Applied optics.