Progress in modeling of fluid flows in crystal growth processes
暂无分享,去创建一个
[1] Y. Kangawa,et al. Global analysis of GaN growth using a solution technique , 2008 .
[2] H. Tezuka,et al. Optimization of the design of a crucible for a SiC sublimation growth system using a global model , 2008 .
[3] A. Ebadian,et al. Numerical Study on Flow Field and Temperature Distribution in Growth Process of 200 mm Czochralski Silicon Crystals , 2007 .
[4] L. Peng,et al. Three-dimensional thermocapillary–buoyancy flow of silicone oil in a differentially heated annular pool , 2007 .
[5] K. Kakimoto,et al. Investigation of oxygen distribution in electromagnetic CZ–Si melts with a transverse magnetic field using 3D global modeling , 2007 .
[6] J. Yana,et al. Application of flow-kinetics model to the PVT growth of SiC crystals , 2007 .
[7] S. Nakamura,et al. Ammonothermal Growth of GaN on an over-1-inch Seed Crystal , 2005 .
[8] K. Kakimoto,et al. Partly three-dimensional global modeling of a silicon Czochralski furnace. II. Model application : Analysis of a silicon Czochralski furnace in a transverse magnetic field , 2005 .
[9] K. Kakimoto,et al. Partly three-dimensional global modeling of a silicon Czochralski furnace. I. Principles, formulation and implementation of the model , 2005 .
[10] K. Kakimoto,et al. An analysis of temperature distribution near the melt–crystal interface in silicon Czochralski growth with a transverse magnetic field , 2005 .
[11] V. Prasad,et al. Effects of Baffle Design on Fluid Flow and Heat Transfer in Ammonothermal Growth of Nitrides , 2004 .
[12] Chung-Wen Lan,et al. Recent progress of crystal growth modeling and growth control , 2004 .
[13] Paul Canfield,et al. Design, Discovery and Growth of Novel Materials For Basic Research: An Urgent U.S. Need Report on the DOE/BES Workshop: “Future Directions of Design, Discovery and Growth of Single Crystals for Basic Research” , 2003 .
[14] V. Prasad,et al. Modeling of Ammonothermal Growth of Nitrides , 2003 .
[15] J. Friedrich,et al. Numerical modeling of crystal growth and solidification experiments carried out under microgravity conditions , 2003 .
[16] M. Dudley,et al. Silicon Carbide Crystals — Part II: Process Physics and Modeling , 2003 .
[17] G. Müller,et al. 3D numerical simulation and experimental investigations of melt flow in an Si Czochralski melt under the influence of a cusp-magnetic field , 2002 .
[18] Vishwanath Prasad,et al. Modeling of Heat Transfer and Kinetics of Physical Vapor Transport Growth of Silicon Carbide Crystals , 2001 .
[19] Vishwanath Prasad,et al. Heat transfer and kinetics of bulk growth of silicon carbide , 2001 .
[20] Vishwanath Prasad,et al. A process model for silicon carbide growth by physical vapor transport , 2001 .
[21] Vishwanath Prasad,et al. Modeling of transport processes and kinetics of silicon carbide bulk growth , 2001 .
[22] Vishwanath Prasad,et al. Kinetics and modeling of sublimation growth of silicon carbide bulk crystal , 2001 .
[23] Aleksey Lipchin,et al. Hybrid finite-volume/finite-element simulation of heat transfer and melt turbulence in Czochralski crystal growth of silicon , 2000 .
[24] Vishwanath Prasad,et al. Modeling of silicon carbide crystal growth by physical vapor transport method , 2000 .
[25] C. Carter,et al. The status of SiC bulk growth from an industrial point of view , 2000 .
[26] Y. Makarov,et al. Analysis of sublimation growth of bulk SiC crystals in tantalum container , 2000 .
[27] Franz Durst,et al. Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVT , 2000 .
[28] Vishwanath Prasad,et al. Modeling of Fluid Flow and Heat Transfer in a Hydrothermal Crystal Growth System: Use of , 1999 .
[29] Robert A. Brown,et al. Comparison of three turbulence models for simulation of melt convection in Czochralski crystal growth of silicon , 1999 .
[30] E. Janzén,et al. A practical model for estimating the growth rate in sublimation growth of SiC , 1999 .
[31] G. Müller,et al. Study of oxygen transport in Czochralski growth of silicon , 1999 .
[32] Vishwanath Prasad,et al. A porous media-based transport model for hydrothermal growth , 1999 .
[33] Vishwanath Prasad,et al. Turbulent transport of oxygen in the Czochralski growth of large silicon crystals , 1999 .
[34] Vishwanath Prasad,et al. Diameter-Controlled Czochralski Growth of Silicon Crystals , 1998 .
[35] Mohammad H. Naraghi,et al. NUMERICAL MODEL FOR RADIATIVE HEAT TRANSFER ANALYSIS IN ARBITRARILY SHAPED AXISYMMETRIC ENCLOSURES WITH GASEOUS MEDIA , 1998 .
[36] A. Wysmołek,et al. AMMONO method of BN, AlN and GaN synthesis and crystal growth. , 1998 .
[37] R. Eckstein,et al. Modelling of the PVT-SiC Bulk Growth Process Taking into Account Global Heat Transfer, Mass Transport and Heat of Crystallization and Results on its Experimental Verification , 1997 .
[38] E. Janzén,et al. A Coupled Finite Element Model for the Sublimation Growth of SiC , 1997 .
[39] Y. Makarov,et al. Modeling Analysis of Temperature Field and Species Transport Inside the System for Sublimation Growth of SiC in Tantalum Container , 1997 .
[40] François Dupret,et al. Time-dependent simulation of the growth of large silicon crystals by the Czochralski technique using a turbulent model for melt convection , 1997 .
[41] Y. Makarov,et al. SiC-bulk growth by physical-vapor transport and its global modelling , 1997 .
[42] M. Pons,et al. Different macroscopic approaches to the modelling of the sublimation growth of Sic single crystals , 1997 .
[43] M. Pons,et al. Thermodynamic Heat Transfer and Mass Transport Modeling of the Sublimation Growth of Silicon Carbide Crystals , 1996 .
[44] G. Müller,et al. Oxygen distribution in Czochralski silicon melts measured by an electrochemical oxygen sensor , 1996 .
[45] F. TangermanDepartment. A PARALLEL ALGORITHM FOR MULTIZONE, MULTIPHASE SYSTEMS WITH APPLICATION TO CRYSTAL GROWTH , 1996 .
[46] Vishwanath Prasad,et al. A multizone adaptive process model for low and high pressure crystal growth , 1995 .
[47] V. Prasad,et al. Role of crucible partition in improving Czochralski melt conditions , 1995 .
[48] F. Durst,et al. On the sublimation growth of SiC bulk crystals: development of a numerical process model , 1995 .
[49] Michael Gevelber,et al. Dynamics and control of the Czochralski process IV. Control structure design for interface shape control and performance evaluation , 1994 .
[50] T. A. Kinney,et al. Application of turbulence modeling to the integrated hydrodynamic thermal-capillary model of Czochralski crystal growth of silicon , 1993 .
[51] M. Crochet,et al. Numerical simulation of molten silicon flow; comparison with experiment , 1991 .
[52] D. E. Bornside,et al. Finite element/Newton method for the analysis of Czochralski crystal growth with diffuse‐grey radiative heat transfer , 1990 .
[53] K. Kakimoto,et al. Flow instability of molten silicon in the Czochralski configuration , 1990 .
[54] D. E. Bornside,et al. Toward an integrated analysis of czochralski growth , 1989 .
[55] J. Derby,et al. Thermal-capillary analysis of Czochralski and liquid encapsulated Czochralski crystal growth. II - Processing strategies , 1986 .
[56] Jeffrey J. Derby,et al. Thermal-capillary analysis of Czochralski and liquid encapsulated Czochralski crystal growth: I. Simulation , 1986 .
[57] V. Tsvetkov,et al. Investigation of growth processes of ingots of silicon carbide single crystals , 1978 .
[58] P. Råback. Modeling of the Sublimation Growth of Silicon Carbide Crystals , 2022 .