Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates
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H. Mertens | R. Ritzenthaler | A. Hikavyy | M. Kim | Z. Tao | K. Wostyn | S. Chew | A. De Keersgieter | G. Mannaert | E. Rosseel | T. Schram | K. Devriendt | D. Tsvetanova | H. Dekkers | S. Demuynck | A. Chasin | E. Van Besien | A. Dangol | S. Godny | B. Douhard | N. Bosman | O. Richard | J. Geypen | H. Bender | K. Barla | D. Mocuta | N. Horiguchi | A. Thean
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