Current transport modeling of carbon nanotube field effect transistors

In the present work, analytical modeling equations describing the current transport in carbon nanotube field effect transistors (CNT-FETs) have been developed from physical electronics, which have strong dependence on the chiral vector and device geometries. These model equations for the CNT-FETs have been compared with the available experimental data and then used to generate voltage transfer characteristics of basic logic devices based on complementary CNT-FETs. The voltage transfer characteristics exhibit characteristics similar to the voltage transfer characteristics of standard CMOS logic devices, with a sharp transition near the logic threshold voltage depending on the input conditions. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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