Reliability of passivated 0.15 /spl mu/m InAlAs-InGaAs HEMTs with pseudomorphic channel

Accelerated life tests of 0.15 /spl mu/m gate length InAlAs-InGaAs HEMTs were performed under DC electrical stress at four temperatures in nitrogen. By defining a 10% transconductance degradation as the failure criterion, we found an activation energy of 1.8 eV and a projected lifetime of 5/spl times/10/sup 6/ hrs at 125/spl deg/ ambient temperature. The degradation was found to be much faster in air than in nitrogen. High temperature storage tests showed that our devices are not sensitive to hydrogen.

[1]  M. Hafizi,et al.  Reliability of InP-based HBT's and HEMT's: experiments, failure mechanisms, and statistics , 1994, Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM).

[2]  Y. Yamamoto,et al.  Donor passivation in n-AllnAs layers by fluorine , 1995 .

[3]  Norio Hayafuji,et al.  Behavior Of Fluorine In N-AlInAs Layers Under Bias-Temperature Stresses , 1996 .

[4]  Michael Dammann,et al.  Effect of atmosphere on reliability of passivated 0.15 /spl mu/m InAlAs/InGaAs HEMTs , 1998 .

[5]  P. Chao,et al.  HEMT degradation in hydrogen gas , 1994, IEEE Electron Device Letters.

[6]  P. Siegel,et al.  A 155-GHz monolithic low-noise amplifier , 1998 .

[7]  K. C. Hwang,et al.  A reliable ECR passivation technique on the 0.1 /spl mu/m InAlAs/InGaAs HEMT device , 1994, Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM).

[8]  Minh Le,et al.  High performance, high yield millimeter-wave MMIC LNAs using InP HEMTs , 1996, 1996 IEEE MTT-S International Microwave Symposium Digest.

[9]  M. Schlechtweg,et al.  Influence of Layout and Packaging on the Temperature of GaAs Power PHEMTs , 1998, 1998 28th European Microwave Conference.

[10]  0.15 μm passivated InP-based HEMT MMIC technology with high thermal stability in hydrogen ambient , 2000, IEEE Electron Device Letters.