On the nature of quantum dash structures

We describe a theoretical model for the linear optical gain properties of a quantum wire assembly and compare it to the well known case of a quantum dot assembly. We also present a technique to analyze the gain of an optical amplifier using bias dependent room temperature amplified spontaneous emission spectra. Employing this procedure in conjunction with the theoretical gain model, we demonstrate that InAs/InP quantum dash structures have quantum-wire-like characteristics. The procedure was used to extract the net gain coefficient, the differential gain, and the relative current component contributing to radiative recombination.

[1]  J. Fraser,et al.  InAs self-assembled quantum-dot lasers grown on (100) InP , 2002 .

[2]  H. Sakaki,et al.  Multidimensional quantum well laser and temperature dependence of its threshold current , 1982 .

[3]  A. Forchel,et al.  Epitaxial growth of 1.55 /spl mu/m emitting InAs quantum dashes on InP-based heterostructures by GS-MBE for long-wavelength laser applications , 2002, International Conference on Molecular Bean Epitaxy.

[4]  S. Sugou,et al.  Ground-state lasing at room temperature in long-wavelength InAs quantum-dot lasers on InP(311)B substrates , 2001 .

[5]  Niloy K. Dutta,et al.  Long wavelength semiconductor lasers , 1988, Technical Digest., International Electron Devices Meeting.

[6]  Jasprit Singh,et al.  Photoluminescence and time-resolved photoluminescence characteristics of InxGa(1−x)As/GaAs self-organized single- and multiple-layer quantum dot laser structures , 1997 .

[7]  A. Forchel,et al.  High Performance 1.3 µm Quantum-Dot Lasers , 2002 .

[8]  Jasprit Singh,et al.  Comparison of the k⋅p and direct diagonalization approaches to the electronic structure of InAs/GaAs quantum dots , 2000 .

[9]  Michel Calligaro,et al.  High-performance 980 nm quantum dot lasers for high-power applications , 2001 .

[10]  Formation of InAs self-assembled quantum rings on InP , 2002, cond-mat/0210631.

[11]  Jasprit Singh Effect of structural disorder on electronic states in GaAs/AlGaAs quantum wires , 1991 .

[12]  A. Stintz,et al.  Room-temperature operation of InAs quantum-dash lasers on InP [001] , 2001, IEEE Photonics Technology Letters.

[13]  Hanan Dery,et al.  Cross-gain modulation in inhomogeneously broadened gain spectra of InP-Based 1550 nm quantum dash optical amplifiers: Small-signal bandwidth dependence on wavelength detuning , 2003 .

[14]  G. Eisenstein,et al.  Relaxation of a kinetic hole due to carrier-carrier scattering in multisubband single-quantum-well semiconductors , 2003 .

[15]  Peter Blood,et al.  Optical mode loss and gain of multiple-layer quantum-dot lasers , 2001 .

[16]  Hiroshi Ishikawa,et al.  Lasing characteristics of self-formed quantum-dot lasers with multistacked dot layer , 1997 .

[17]  D. Deppe,et al.  Electron and hole tunneling in a moderate density quantum dot ensemble with shallow confinement potentials , 1998 .

[18]  Sylvain Raymond,et al.  InAs self‐assembled quantum dots on InP by molecular beam epitaxy , 1996 .

[19]  M. Amann,et al.  Ultrafast switch-off of an electrically pumped quantum-dot laser , 2002 .

[20]  Mitsuru Sugawara,et al.  Light emission spectra of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers: Effect of homogeneous broadening of the optical gain on lasing characteristics , 1999 .

[21]  Egorov,et al.  Ultranarrow Luminescence Lines from Single Quantum Dots. , 1995, Physical review letters.

[22]  G. Eisenstein,et al.  Broad-band wavelength conversion based on cross-gain modulation and four-wave mixing in InAs-InP quantum-dash semiconductor optical amplifiers operating at 1550 nm , 2003, IEEE Photonics Technology Letters.

[23]  Frank Stern,et al.  Spontaneous and Stimulated Recombination Radiation in Semiconductors , 1964 .

[24]  A. Forchel,et al.  Long-wavelength InP-based quantum-dash lasers , 2002, IEEE Photonics Technology Letters.

[25]  Johann Peter Reithmaier,et al.  InAs/InP 1550 nm quantum dash semiconductor optical amplifiers , 2002 .

[26]  Nikolai N. Ledentsov,et al.  InGaAs-GaAs quantum-dot lasers , 1997 .

[27]  M. Asada,et al.  Gain and the threshold of three-dimensional quantum-box lasers , 1986 .

[28]  P. Blood,et al.  Measurement and calculation of spontaneous recombination current and optical gain in GaAs-AlGaAs quantum-well structures , 1991 .

[29]  S. Krishna,et al.  High-speed modulation and switching characteristics of In(Ga)As-Al(Ga)As self-organized quantum-dot lasers , 2000, IEEE Journal of Selected Topics in Quantum Electronics.

[30]  P. Lawaetz,et al.  Valence-Band Parameters in Cubic Semiconductors , 1971 .

[31]  Stephan W Koch,et al.  Quantum theory of the optical and electronic properties of semiconductors, fifth edition , 2009 .

[32]  Charles Howard Henry,et al.  Measurement of gain and absorption spectra in AlGaAs buried heterostructure lasers , 1980 .

[33]  M. S. Skolnick,et al.  Emission spectra and mode structure of InAs/GaAs self-organized quantum dot lasers , 1998 .