High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC=0.5V) logic applications
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G. Dewey | R. Pillarisetty | M. Radosavljevic | R. Chau | M. Hudait | T. Ashley | A. Andreev | S. Coomber | M. Emeny | M. Fearn | D. Hayes | K. Hilton | R. Jefferies | T. Martin | W. Rachmady | T. Rakshit | S.J. Smith | M. Uren | D. Wallis | P. Wilding | S. Smith
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